IP Library Granted Patent US 5,952,722
Granted Patent Utility
US 5,952,722 · App. 08/825,527

Semiconductor device having high resistive element including high melting point metal

Inventor: Masaki Watanabe
Patented Case View Patent ↗
Granted: Sep 14, 1999 Filed: Mar 28, 1997
Inventor
Masaki Watanabe
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,952,722
App. No.
08/825,527
Filed
1997-03-28
Granted
1999-09-14
Kind
A