Granted Patent
Utility
US 5,953,632 · App. 08/889,492
Method for manufacturing semiconductor device comprising a silicide film
Inventor:
Yoshihisa Matsubara
Patented Case
View Patent ↗
Granted: Sep 14, 1999
Filed: Jul 8, 1997
Inventor
Yoshihisa Matsubara
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.