Granted Patent
Utility
US 5,959,326 · App. 08/852,530
Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration
Inventors:
Fumiki Aiso, Hirohito Watanabe, Toshiyuki Hirota, Masanobu Zenke, Shuji Fujiwara
Patented Case
View Patent ↗
Granted: Sep 28, 1999
Filed: May 7, 1997
Inventors
Fumiki Aiso
Hirohito Watanabe
Toshiyuki Hirota
Masanobu Zenke
Shuji Fujiwara
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.