Granted Patent
Utility
US 5,960,270 · App. 08/907,990
Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions
Inventors:
Veena Misra, Suresh Venkatesan, Christopher C. Hobbs, Brad Smith, Jeffrey S. Cope, Earnest B. Wilson
Patented Case
View Patent ↗
Granted: Sep 28, 1999
Filed: Aug 11, 1997
Inventors
Veena Misra
Suresh Venkatesan
Christopher C. Hobbs
Brad Smith
Jeffrey S. Cope
Earnest B. Wilson
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.