Granted Patent
Utility
US 5,960,289 · App. 09/102,267
Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region
Inventors:
Paul G. Y. Tsui, Hsing-Huang Tseng, Navakanta Bhat, Ping-Yang Chen
Patented Case
View Patent ↗
Granted: Sep 28, 1999
Filed: Jun 22, 1998
Inventors
Paul G. Y. Tsui
Hsing-Huang Tseng
Navakanta Bhat
Ping-Yang Chen
Assignee (at issue)
Motorola, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.