IP Library › Granted Patent US 5,962,884
Granted Patent Utility
US 5,962,884 · App. 08/905,380

Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same

Inventors: Sheng Teng Hsu, Jong-Jan Lee
Patented Case View Patent ↗
Granted: Oct 5, 1999 Filed: Aug 4, 1997
Inventors
Sheng Teng Hsu
Jong-Jan Lee
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA

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Quick Facts
Patent No.
US 5,962,884
App. No.
08/905,380
Filed
1997-08-04
Granted
1999-10-05
Kind
A