IP Library › Granted Patent US 5,962,892
Granted Patent Utility
US 5,962,892 · App. 08/540,911

MISFET and complementary MISFET device having high performance source and drain diffusion layer

Inventor: Kiyoshi Takeuchi
Patented Case View Patent ↗
Granted: Oct 5, 1999 Filed: Oct 11, 1995
Inventor
Kiyoshi Takeuchi
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,962,892
App. No.
08/540,911
Filed
1995-10-11
Granted
1999-10-05
Kind
A