IP Library Granted Patent US 5,962,908
Granted Patent Utility
US 5,962,908 · App. 08/845,214

Contact regions for narrow trenches in semiconductor devices and method

Inventors: James D. Beasom, Dustin A. Woodbury
Patented Case View Patent ↗
Granted: Oct 5, 1999 Filed: Apr 21, 1997
Inventors
James D. Beasom
Dustin A. Woodbury
Assignee (at issue)
HARRIS CORPORATION

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Quick Facts
Patent No.
US 5,962,908
App. No.
08/845,214
Filed
1997-04-21
Granted
1999-10-05
Kind
A