Granted Patent
Utility
US 5,963,732 · App. 08/915,559
Method for simulating impurity diffusion in semiconductor with oxidation
Inventor:
Toshiyuki Syo
Patented Case
View Patent ↗
Granted: Oct 5, 1999
Filed: Aug 21, 1997
Inventor
Toshiyuki Syo
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.