IP Library › Granted Patent US 5,964,944
Granted Patent Utility
US 5,964,944 · App. 08/820,888

Method of producing silicon carbide single crystal

Inventors: Naohiro Sugiyama, Atsuto Okamoto, Toshihiko Tani, Nobuo Kamiya
Patented Case View Patent ↗
Granted: Oct 12, 1999 Filed: Mar 21, 1997
Inventors
Naohiro Sugiyama
Atsuto Okamoto
Toshihiko Tani
Nobuo Kamiya
Assignee (at issue)
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

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Quick Facts
Patent No.
US 5,964,944
App. No.
08/820,888
Filed
1997-03-21
Granted
1999-10-12
Kind
A