IP Library › Granted Patent US 5,969,401
Granted Patent Utility
US 5,969,401 · App. 08/989,664

Silicon on insulator substrate with improved insulation patterns

Inventor: Tomohiro Hamajima
Patented Case View Patent ↗
Granted: Oct 19, 1999 Filed: Dec 12, 1997
Inventor
Tomohiro Hamajima
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,969,401
App. No.
08/989,664
Filed
1997-12-12
Granted
1999-10-19
Kind
A