Granted Patent
Utility
US 5,981,349 · App. 08/939,372
Method of forming semiconducting planar junction termination with high breakdown voltage and low parasitic capacitance
Inventor:
Francois Hebert
Patented Case
View Patent ↗
Granted: Nov 9, 1999
Filed: Sep 29, 1997
Inventor
Francois Hebert
Assignee (at issue)
Spectrian Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.