Granted Patent
Utility
US 5,981,364 · App. 08/568,195
Method of forming a silicon gate to produce silicon devices with improved performance
Inventors:
Mark T. Ramsbey, Hsingya Arthur Wang, Yu Sun
Patented Case
View Patent ↗
Granted: Nov 9, 1999
Filed: Dec 6, 1995
Inventors
Mark T. Ramsbey
Hsingya Arthur Wang
Yu Sun
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.