Granted Patent
Utility
US 5,985,756 · App. 08/884,035
Method of forming an interconnection in a contact hole in an insulation layer over a silicon substrate
Inventor:
Toshiki Shinmura
Patented Case
View Patent ↗
Granted: Nov 16, 1999
Filed: Jun 27, 1997
Inventor
Toshiki Shinmura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.