Granted Patent
Utility
US 5,989,340 · App. 08/913,278
Process and device for sublimation growing of silicon carbide monocrystals
Inventors:
Dietrich Stephani, Johannes Volkl
Patented Case
View Patent ↗
Granted: Nov 23, 1999
Filed: Aug 27, 1997
Inventors
Dietrich Stephani
Johannes Volkl
Assignee (at issue)
Siemens Aktiengesellschaft
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.