IP Library › Granted Patent US 5,989,933
Granted Patent Utility
US 5,989,933 · App. 08/932,095

Method of forming a cadmium telluride/silicon structure

Inventors: Malcolm J. Bevan, Hung-Dah Shih
Patented Case View Patent ↗
Granted: Nov 23, 1999 Filed: Sep 17, 1997
Inventors
Malcolm J. Bevan
Hung-Dah Shih
Assignee (at issue)
DRS Technologies, Inc.

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Quick Facts
Patent No.
US 5,989,933
App. No.
08/932,095
Filed
1997-09-17
Granted
1999-11-23
Kind
A