Granted Patent
Utility
US 5,989,965 · App. 09/023,032
Nitride overhang structures for the silicidation of transistor electrodes with shallow junction
Inventors:
Jer-Shen Maa, Sheng Teng Hsu, Chien-Hsiung Peng
Patented Case
View Patent ↗
Granted: Nov 23, 1999
Filed: Feb 13, 1998
Inventors
Jer-Shen Maa
Sheng Teng Hsu
Chien-Hsiung Peng
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.