IP Library Granted Patent US 5,989,969
Granted Patent Utility
US 5,989,969 · App. 08/926,408

Method of producing silicon layer having surface controlled to be uneven

Inventors: Hirohito Watanabe, Ichiro Honma
Patented Case View Patent ↗
Granted: Nov 23, 1999 Filed: Sep 8, 1997
Inventors
Hirohito Watanabe
Ichiro Honma
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 5,989,969
App. No.
08/926,408
Filed
1997-09-08
Granted
1999-11-23
Kind
A