Granted Patent
Utility
US 5,994,736 · App. 09/134,378
Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof
Inventors:
Masahiro Sugawara, Katsuki Hazama
Patented Case
View Patent ↗
Granted: Nov 30, 1999
Filed: Aug 14, 1998
Inventors
Masahiro Sugawara
Katsuki Hazama
Assignee (at issue)
WINBOND ELECTRONICS CORP.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.