Granted Patent
Utility
US 6,002,158 · App. 08/998,923
High breakdown-voltage diode with electric-field relaxation region
Inventor:
Hiroshi Yanagigawa
Patented Case
View Patent ↗
Granted: Dec 14, 1999
Filed: Dec 29, 1997
Inventor
Hiroshi Yanagigawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.