IP Library › Granted Patent US 6,008,121
Granted Patent Utility
US 6,008,121 · App. 08/618,161

Etching high aspect contact holes in solid state devices

Inventors: Chi-Hua Yang, Virinder Grewal, Volker B. Laux
Patented Case View Patent ↗
Granted: Dec 28, 1999 Filed: Mar 19, 1996
Inventors
Chi-Hua Yang
Virinder Grewal
Volker B. Laux
Assignees (at issue)
Siemens Aktiengesellschaft
International Business Machines Corporation

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Quick Facts
Patent No.
US 6,008,121
App. No.
08/618,161
Filed
1996-03-19
Granted
1999-12-28
Kind
A