Granted Patent
Utility
US 6,008,520 · App. 08/895,497
Trench MOSFET with heavily doped delta layer to provide low on- resistance
Inventors:
Mohamed N. Darwish, Richard K. Williams
Patented Case
View Patent ↗
Granted: Dec 28, 1999
Filed: Jul 16, 1997
Inventors
Mohamed N. Darwish
Richard K. Williams
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.