Granted Patent
Utility
US 6,013,577 · App. 09/014,467
Method of making an amorphous surface for a gate electrode during the fabrication of a semiconductor device
Inventor:
Naohiko Kimizuka
Patented Case
View Patent ↗
Granted: Jan 11, 2000
Filed: Jan 28, 1998
Inventor
Naohiko Kimizuka
Assignees (at issue)
NEC CORPORATION
Tetsuya Muraoka
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.