Granted Patent
Utility
US 6,015,987 · App. 09/071,122
Semiconductor device having capacitor exhibiting improved mositure resistance and manufacturing method thereof
Inventors:
Koji Arita, Eiji Fujii, Yasuhiro Shimada, Yasuhiro Uemoto, Toru Nasu, Akihiro Matsuda, Yoshihisa Nagano, Atsuo Inoue, Taketoshi Matsuura, Tatsuo Otsuki
Patented Case
View Patent ↗
Granted: Jan 18, 2000
Filed: May 4, 1998
Inventors
Koji Arita
Eiji Fujii
Yasuhiro Shimada
Yasuhiro Uemoto
Toru Nasu
Akihiro Matsuda
Yoshihisa Nagano
Atsuo Inoue
Taketoshi Matsuura
Tatsuo Otsuki
Assignee (at issue)
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.