Granted Patent
Utility
US 6,017,786 · App. 08/982,186
Method for forming a low barrier height oxide layer on a silicon substrate
Inventors:
Yuesong He, John Jianshi Wang, Dae Yeong Joh
Patented Case
View Patent ↗
Granted: Jan 25, 2000
Filed: Dec 17, 1997
Inventors
Yuesong He
John Jianshi Wang
Dae Yeong Joh
Assignee (at issue)
Advanced Micro Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.