Granted Patent
Utility
US 6,017,793 · App. 08/887,408
Method of forming a memory cell of a nonvolatile semiconductor memory device
Inventor:
Ken-Ichi Oyama
Patented Case
View Patent ↗
Granted: Jan 25, 2000
Filed: Jul 2, 1997
Inventor
Ken-Ichi Oyama
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.