IP Library Granted Patent US 6,017,793
Granted Patent Utility
US 6,017,793 · App. 08/887,408

Method of forming a memory cell of a nonvolatile semiconductor memory device

Inventor: Ken-Ichi Oyama
Patented Case View Patent ↗
Granted: Jan 25, 2000 Filed: Jul 2, 1997
Inventor
Ken-Ichi Oyama
Assignee (at issue)
NEC CORPORATION

This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.

Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 6,017,793
App. No.
08/887,408
Filed
1997-07-02
Granted
2000-01-25
Kind
A