IP Library Granted Patent US 6,017,801
Granted Patent Utility
US 6,017,801 · App. 09/006,479

Method for fabricating field effect transistor

Inventor: Kang-Sik Youn
Patented Case View Patent ↗
Granted: Jan 25, 2000 Filed: Jan 13, 1998
Inventor
Kang-Sik Youn
Assignee (at issue)
LG Semicon Co., Ltd.

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Quick Facts
Patent No.
US 6,017,801
App. No.
09/006,479
Filed
1998-01-13
Granted
2000-01-25
Kind
A