IP Library Granted Patent US 6,018,166
Granted Patent Utility
US 6,018,166 · App. 09/124,680

Polysilicon carbon source/drain heterojunction thin-film transistor

Inventors: Kang-Cheng Lin, Hong-Jye Hong
Patented Case View Patent ↗
Granted: Jan 25, 2000 Filed: Jul 30, 1998
Inventors
Kang-Cheng Lin
Hong-Jye Hong
Assignee (at issue)
Industrial Technology Research Institute

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Quick Facts
Patent No.
US 6,018,166
App. No.
09/124,680
Filed
1998-07-30
Granted
2000-01-25
Kind
A