Granted Patent
Utility
US 6,022,780 · App. 09/133,599
Semiconductor device having source and drain regions different in depth from each other and process of fabrication thereof
Inventor:
Hiroaki Yokoyama
Patented Case
View Patent ↗
Granted: Feb 8, 2000
Filed: Aug 13, 1998
Inventor
Hiroaki Yokoyama
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.