IP Library Granted Patent US 6,025,232
Granted Patent Utility
US 6,025,232 · App. 08/968,085

Methods of forming field effect transistors and related field effect transistor constructions

Inventors: Zhiqiang Wu, Paul Hatab
Patented Case View Patent ↗
Granted: Feb 15, 2000 Filed: Nov 12, 1997
Inventors
Zhiqiang Wu
Paul Hatab
Assignee (at issue)
Micron Technology, Inc.

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Quick Facts
Patent No.
US 6,025,232
App. No.
08/968,085
Filed
1997-11-12
Granted
2000-02-15
Kind
A