Granted Patent
Utility
US 6,025,237 · App. 08/947,091
Methods of forming field effect transistors having graded drain region doping profiles therein
Inventor:
Young-Suk Choi
Patented Case
View Patent ↗
Granted: Feb 15, 2000
Filed: Oct 8, 1997
Inventor
Young-Suk Choi
Assignee (at issue)
Fairchild Korea Semiconductor Ltd.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.