Granted Patent
Utility
US 6,027,993 · App. 08/966,866
Method of forming an opening in an insulation film over a semiconductor substrate
Inventor:
Yuu Ueda
Patented Case
View Patent ↗
Granted: Feb 22, 2000
Filed: Nov 10, 1997
Inventor
Yuu Ueda
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.