IP Library Granted Patent US 6,030,868
Granted Patent Utility
US 6,030,868 · App. 09/033,916

Elimination of oxynitride (ONO) etch residue and polysilicon stringers through isolation of floating gates on adjacent bitlines by polysilicon oxidation

Inventors: Kathleen R. Early, Michael K. Templeton, Nicholas H. Tripsas, Maria C. Chan, Mark T. Ramsbey
Patented Case View Patent ↗
Granted: Feb 29, 2000 Filed: Mar 3, 1998
Inventors
Kathleen R. Early
Michael K. Templeton
Nicholas H. Tripsas
Maria C. Chan
Mark T. Ramsbey
Assignee (at issue)
Advanced Micro Devices, Inc.

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Quick Facts
Patent No.
US 6,030,868
App. No.
09/033,916
Filed
1998-03-03
Granted
2000-02-29
Kind
A