IP Library Granted Patent US 6,031,271
Granted Patent Utility
US 6,031,271 · App. 09/188,378

High yield semiconductor device and method of fabricating the same

Inventor: Kiyotaka Imai
Patented Case View Patent ↗
Granted: Feb 29, 2000 Filed: Nov 10, 1998
Inventor
Kiyotaka Imai
Assignee (at issue)
NEC CORPORATION

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Quick Facts
Patent No.
US 6,031,271
App. No.
09/188,378
Filed
1998-11-10
Granted
2000-02-29
Kind
A