IP Library Granted Patent US 6,037,646
Granted Patent Utility
US 6,037,646 · App. 08/865,890

High-frequency GaAs substrate based schottky barrier diodes

Inventors: Aaron K. Oki, Donald K. Umemoto, Liem T. Tran, Dwight C. Streit
Patented Case View Patent ↗
Granted: Mar 14, 2000 Filed: May 30, 1997
Inventors
Aaron K. Oki
Donald K. Umemoto
Liem T. Tran
Dwight C. Streit
Assignee (at issue)
TRW Limited

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Quick Facts
Patent No.
US 6,037,646
App. No.
08/865,890
Filed
1997-05-30
Granted
2000-03-14
Kind
A