IP Library › Granted Patent US 6,037,664
Granted Patent Utility
US 6,037,664 · App. 09/052,215

Dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer

Inventors: Bin Zhao, Prahalad K. Vasudev, Ronald S. Horwath, Thomas E. Seidel, Peter M. Zeitzoff
Patented Case View Patent ↗
Granted: Mar 14, 2000 Filed: Mar 31, 1998
Inventors
Bin Zhao
Prahalad K. Vasudev
Ronald S. Horwath
Thomas E. Seidel
Peter M. Zeitzoff

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Quick Facts
Patent No.
US 6,037,664
App. No.
09/052,215
Filed
1998-03-31
Granted
2000-03-14
Kind
A