Granted Patent
Utility
US 6,046,095 · App. 09/340,002
Semiconductor substrate having polysilicon layers and fabrication process of semiconductor device using the same
Inventor:
Mitsuhiro Horikawa
Patented Case
View Patent ↗
Granted: Apr 4, 2000
Filed: Jun 25, 1999
Inventor
Mitsuhiro Horikawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.