Granted Patent
Utility
US 6,046,470 · App. 08/946,613
Trench-gated MOSFET with integral temperature detection diode
Inventors:
Richard K. Williams, Wayne B. Grabowski
Patented Case
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Granted: Apr 4, 2000
Filed: Oct 7, 1997
Inventors
Richard K. Williams
Wayne B. Grabowski
Assignee (at issue)
SILICONIX INCORPORATED
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.