Granted Patent
Utility
US 6,048,738 · App. 08/870,375
Method of making ferroelectric memory cell for VLSI RAM array
Inventors:
Sheng Teng Hsu, Jong-Jan Lee
Patented Case
View Patent ↗
Granted: Apr 11, 2000
Filed: Jun 6, 1997
Inventors
Sheng Teng Hsu
Jong-Jan Lee
Assignees (at issue)
Sharp Laboratories of America, Inc.
SHARP KABUSHIKI KAISHA
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.