IP Library Granted Patent US 6,048,748
Granted Patent Utility
US 6,048,748 · App. 09/293,277

Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials

Inventors: Reena Khare, Fred A. Kish, Jr.
Patented Case View Patent ↗
Granted: Apr 11, 2000 Filed: Apr 16, 1999
Inventors
Reena Khare
Fred A. Kish, Jr.
Assignee (at issue)
Hewlett-Packard Company, L.P.

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Quick Facts
Patent No.
US 6,048,748
App. No.
09/293,277
Filed
1999-04-16
Granted
2000-04-11
Kind
A