IP Library Granted Patent US 6,048,772
Granted Patent Utility
US 6,048,772 · App. 09/072,393

Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection

Inventor: Pablo E. D'Anna
Patented Case View Patent ↗
Granted: Apr 11, 2000 Filed: May 4, 1998
Inventor
Pablo E. D'Anna
Assignee (at issue)
XEMOD, Inc.

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Quick Facts
Patent No.
US 6,048,772
App. No.
09/072,393
Filed
1998-05-04
Granted
2000-04-11
Kind
A