Granted Patent
Utility
US 6,048,795 · App. 08/840,550
Process of fabricating a semiconductor device having nitrogen-containing silicon layer and refractory metal layer
Inventors:
Youichiro Numasawa, Shinji Fujieda, Yoshinao Miura
Patented Case
View Patent ↗
Granted: Apr 11, 2000
Filed: Apr 3, 1997
Inventors
Youichiro Numasawa
Shinji Fujieda
Yoshinao Miura
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.