Granted Patent
Utility
US 6,049,098 · App. 08/639,226
Bipolar transistor having an emitter region formed of silicon carbide
Inventor:
Fumihiko Sato
Patented Case
View Patent ↗
Granted: Apr 11, 2000
Filed: Apr 26, 1996
Inventor
Fumihiko Sato
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.