Granted Patent
Utility
US 6,054,352 · App. 09/027,305
Method of manufacturing a silicon carbide vertical MOSFET
Inventor:
Katsunori Ueno
Patented Case
View Patent ↗
Granted: Apr 25, 2000
Filed: Feb 20, 1998
Inventor
Katsunori Ueno
Assignee (at issue)
FUJI ELECTRIC CO., LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.