Granted Patent
Utility
US 6,063,663 · App. 09/139,909
Method for manufacturing a native MOS P-channel transistor with a process for manufacturing non-volatile memories
Inventors:
Paolo Caprara, Claudio Brambilla, Manlio Sergio Cereda, Valerio Cassio
Patented Case
View Patent ↗
Granted: May 16, 2000
Filed: Aug 26, 1998
Inventors
Paolo Caprara
Claudio Brambilla
Manlio Sergio Cereda
Valerio Cassio
Assignee (at issue)
SGS-Thomson Microelectronics S.A.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.