Granted Patent
Utility
US 6,063,669 · App. 08/805,273
Manufacturing method of semiconductor memory device having a trench gate electrode
Inventor:
Yoshihiro Takaishi
Patented Case
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Granted: May 16, 2000
Filed: Feb 25, 1997
Inventor
Yoshihiro Takaishi
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.