IP Library › Granted Patent US 6,063,676
Granted Patent Utility
US 6,063,676 · App. 08/871,139

Mosfet with raised source and drain regions

Inventors: Jeong Yeol Choi, Chung Chyung Han, Ken-Chuen Mui
Patented Case View Patent ↗
Granted: May 16, 2000 Filed: Jun 9, 1997
Inventors
Jeong Yeol Choi
Chung Chyung Han
Ken-Chuen Mui
Assignee (at issue)
Integrated Device Technology, Inc.

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Quick Facts
Patent No.
US 6,063,676
App. No.
08/871,139
Filed
1997-06-09
Granted
2000-05-16
Kind
A