Granted Patent
Utility
US 6,064,079 · App. 09/115,239
Gallium nitride-based compound semiconductor device
Inventors:
Masahiro Yamamoto, Shinya Nunoue, Katsunobu Sasanuma, Masayuki Ishikawa
Patented Case
View Patent ↗
Granted: May 16, 2000
Filed: Jul 14, 1998
Inventors
Masahiro Yamamoto
Shinya Nunoue
Katsunobu Sasanuma
Masayuki Ishikawa
Assignee (at issue)
Kabushiki Kaisha Toshiba
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.