Granted Patent
Utility
US 6,064,088 · App. 09/097,532
RF power MOSFET device with extended linear region of transconductance characteristic at low drain current
Inventor:
Pablo E. D'Anna
Patented Case
View Patent ↗
Granted: May 16, 2000
Filed: Jun 15, 1998
Inventor
Pablo E. D'Anna
Assignee (at issue)
XEMOD, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.