Granted Patent
Utility
US 6,066,521 · App. 09/256,173
Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor
Inventors:
Hiroaki Yokoyama, Toshio Komuro
Patented Case
View Patent ↗
Granted: May 23, 2000
Filed: Feb 24, 1999
Inventors
Hiroaki Yokoyama
Toshio Komuro
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.